[23p-P10-1~2] 15.7 Crystal characterization, impurities and crystal defects

[23p-P10-1] Characterization of deep level defects in (111) B-doped CVD diamond films using the transient photocapacitance method

〇Osamu Maida¹, Taishi Kodama¹, Daisuke Kanemoto¹, Tetsuya Hirose¹ (1.Osaka Univ.)

Keywords:photocapacitance, diamond

We have developed a highly-sensitive transient photocapacitance measurement system that was optimized for detection of deep defects in diamond, and characterized the (111) boron-doped diamond films homoepitaxially grown by using a high-power-density microwave-plasma chemical vapor deposition method. Photocapacitance spectrum has no steep increase suggesting that the (111) boron-doped diamond film has a continuous energy distribution of deep levels.