Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

Koichi Kakimoto; Satoshi Nakano

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Takuto Kojima(Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-N203-7] Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

〇Koichi Kakimoto¹, Satoshi Nakano¹ (1.RIAM, Kyushu Univ.)

Keywords:SiC, simulation, dislocation

Step flow mode is applied to growth of SiC crystal grown by PVT method by using tilted growth angle. Several papers on analysis of dislocation density have been published by using numerical methods so far. This paper reports analytical results regarding dislocation density in a SiC crystal grown by tilted angle method including growth and cooling processes. This paper also reports the analytical result of [0001] grown crystals and that of tilted grown SiC from [0001] direction.