The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[10p-N221-1~6] 15.1 Bulk crystal growth

Fri. Sep 10, 2021 1:30 PM - 4:15 PM N221 (Oral)

Yuui Yokota(Tohoku Univ.)

3:45 PM - 4:00 PM

[10p-N221-5] Crystal growth of Si doped Fe metal single crystal by CZ method

Tsuyoshi Kumagai1, Hiroyuki Ando1, Toru Kawamata2, Kazumasa Sugiyama2, Suzuki Shigeru3, Tsuguo Fukuda1 (1.Fukuda Crystal Lab., 2.IMR, Tohoku Univ., 3.MicroSIC, Tohoku Univ.)

Keywords:single crystal, metal, silicon steel

Since Fe has a transformation point, a single crystal cannot be grown, but a single crystal growth in a Fe-Si solid solution is possible. This time, we succeeded in pulling up a Fe-Si single crystal with a size of φ35 mm and a straight body of 65 mm. The Si composition of the grown crystal was evaluated by X-ray fluorescence, and it was confirmed that the Si composition was 5.7 at%. In order to compare with the Fe0.82Si0.18 single crystal that has already been developed as a magnetostrictive material, a diameter of 2 inches or more is prepared, and the crystal quality and workability are investigated and reported.

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