The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[10p-N221-1~6] 15.1 Bulk crystal growth

Fri. Sep 10, 2021 1:30 PM - 4:15 PM N221 (Oral)

Yuui Yokota(Tohoku Univ.)

4:00 PM - 4:15 PM

[10p-N221-6] Crystal growth of Cu single crystal by CZ technique using partition in the crucible

Kazuya Takahashi1, Hiroyuki Ando1, Tsuyoshi Kumagai1, Takashi Fujii1,2, Toru Kawamata3, Kazumasa Sugiyama3, Tsuguo Fukuda1 (1.Fukuda Crystal Lab., 2.Ritsumeikan Univ., 3.IMR, Tohoku Univ.)

Keywords:Cu crystal, metal single crystal, crystal growth

Cuはグラフェン用基板として注目され、高品質かつ大面積エピタキシャル基板が要求されるようになってきた。これまでCZ法での大口径化が困難であったが、今回、二重坩堝式CZ法を応用し、直径2インチサイズの単結晶作成に成功した。

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