The 82nd JSAP Autumn Meeting 2021

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13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N303 (Oral)

Ariyuki Kato(Nagaoka Univ. of Tech.), Jun Tatebayashi(Osaka Univ.)

5:00 PM - 5:15 PM

▼ [10p-N303-14] Long wavelength PL of InAs surface quantum dots enhanced by underlying reservoir

〇(DC)Hanif Mohammadi1, Ronel Roca1, Itaru Kamiya1 (1.Toyota tech. inst.)

Keywords:InAs surface quantum dots, Underlying carrier reservoir layers, Telecommunication fiber optic

We show the potential of InAs surface quantum dots (SQDs) for use in telecommunication fiber optic cables (TFOC) 3rd operational window, ca. 1550 nm. Through this research the influence of underlying carrier reservoir layers and carrier trasfer on the SQDs PL emission was investigated. As a result of this investigation strong PL emission suitable for TFOC’s 3rd operational window, and beyond, was achieved.