The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N303 (Oral)

Ariyuki Kato(Nagaoka Univ. of Tech.), Jun Tatebayashi(Osaka Univ.)

6:15 PM - 6:30 PM

[10p-N303-19] Photoconduction, Luminescence and Optical Absorption of Porous Nano-Silicon during Chemical Oxidation in aqueous solutions

Bernard Gelloz1, Souki Sakata2, Lianhua Jin2 (1.Nagoya Univ., 2.Yamanashi Univ.)

Keywords:porous silicon, luminescence, oxidation

The photocurrent, a signature of light transmission through porous silicon (PSi), was used to study the chemical oxidation of p-type PSi in different aqueous solutions. The photocurrent increases as the oxidation progresses since the formed oxide is transparent at the 405 nm light. A model was developed to explain its progress, based on oxidation rates and silicon oxide dissolution rates. The PL increases during oxidation as a result of increased quantum confinement in the PSi structure. Eventually, the efficiency decreases, most likely due to the inevitable decrease in Si emitting centers after the oxidation has consumed a large amount of silicon. Our results shows that the PL efficiency may increase more when the oxide is grown at a slow rate compared to at a high rate.