The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N303 (Oral)

Ariyuki Kato(Nagaoka Univ. of Tech.), Jun Tatebayashi(Osaka Univ.)

6:00 PM - 6:15 PM

[10p-N303-18] Relationship between carrier concentration and IR absorption in Mg2Si crystals

Hiroto Tsuchida1, Naoki Mizunuma1, Haruhiko Udono1 (1.Ibaraki Univ.)

Keywords:Mg2Si, IR absorption, FTIR

We have reported the possibility of easily estimating the carrier concentration from the optical absorption peak value around 0.4 eV in n-type Mg2Si. However, the carrier concentrations of the samples used in the previous reports were biased, and the absorption values were insufficiently investigated in a specific range. In order to investigate the relationship between the carrier concentration and the infrared absorption of n-type Mg2Si in more detail, we report here the evaluation of the optical absorption at 0.4 eV of Mg2Si crystals with various carrier concentrations.