2:15 PM - 2:30 PM
▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al2O3/GeOx/p-Ge gate stacks by C-V measurements
Keywords:Germanium, MOS interfaces, slow trap
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Fri. Sep 10, 2021 1:00 PM - 4:15 PM N323 (Oral)
Keisuke Yamamoto(Kyushu Univ.), Yuuichiro Mitani(Tokyo City University)
2:15 PM - 2:30 PM
Keywords:Germanium, MOS interfaces, slow trap