[10p-N323-1~12] 13.3 絶縁膜技術

▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al₂O₃/GeO_x/p-Ge gate stacks by C-V measurements

〇Mengnan Ke¹、Takenaka Mitsuru²、Shinichi Takagi² (1.Tokyo Univ. of Sci.、2.Univ. of Tokyo)

キーワード：Germanium, MOS interfaces, slow trap