[10p-N323-1~12] 13.3 Insulator technology

[10p-N323-9] LPCVD SiN Film Breakdown and N₂-anneal Temperature (Ⅱ): ESR and FTIR Evaluations

〇Hayato Miyagawa¹, Hisatsugu Kurita², Masataka Nakamura², Yoshiaki Kamigaki³ (1.Kagawa Univ., 2.ROHM Hamamatsu., 3.E&B Research Lab.)

Keywords:SiN, ESR, FTIR

Details of Si bonding defect which causes the dielectric breakdown in the SiN capacitor film grown by LP-CVD were investigated. Electron Spin Resonance and Fourier Transform Infrared Spectroscopy were measured for N₂-annealed SiN samples to elucidate the state of bonding defects where each ESR signals were separated precisely by tactical peak fitting.