[10p-N405-1~11] CS.7 3.15 シリコンフォトニクス・集積フォトニクス、4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonicsのコードシェアセッション

▲ [10p-N405-2] Thermal resistance reduction of membrane FP laser bonded by a-Si nano-film assisted surface activated bonding

〇Weicheng Fang¹、Naoki Takahashi¹、Yoshitaka Ohiso¹、Tomohiro Amemiya^1,2、Nobuhiko Nishiyama^1,2 (1.Tokyo Tech.、2.IIR)

キーワード：surface activated bonding, membrane laser

Replacing conventional electrical global wiring to optical wiring is a promising solution to overcome interconnect bottleneck of Si-LSIs. For this purpose, we have proposed a InP-based membrane photonic platform with a membrane distributed reflection (DR) laser bonded on Si by benzocyclobutene (BCB) adhesive wafer bonding. However, its high thermal resistance, due to low thermal conductivity material of BCB, was a problem for high temperature operation. In this report, a room temperature surface activated bonding assisted by a-Si nano-film was introduced to membrane FP lasers for the first time and its thermal property was measured.