[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-11] Expansion start points of Shockley Stacking Faults from BPD in 4H-SiC Epitaxial Layer by Ultraviolet Irradiation

〇Yohsuke Matsushita¹, Kazumi Takano¹, Yasuyuki Igarashi¹, Muneo Sasaki², Yuya Yamada² (1.ITES Co. Ltd., 2.Industrial Research Center of Shiga Prefecture)

Keywords:SiC, Basal plane dislocation, Shockley type stacking fault

It is known that the basal plane dislocations (BPD) in the epi layer expand to Shockley type stacking faults (SSF) when the 4H-SiC MOSFET is forward biased, causing electrical degradation.
SSF expansion was similarly caused by UV irradiation, and the expansion start points of the SSFs werescrutinized by the UV-PL method. As a result, the BPD-TED conversion pointswerewidely distributed in the depth direction, whereas most of the expansionstart points of the SSFs were found to be located near the interface between the substrate and the buffer layer.