[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-12] Structural analysis at substrate/epilayer boundary of 1SSF expanded from the surface side in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

Keywords:silicon carbide, stacking fault, partial dislocation

We have been examining on structural analyses and how they expanded on single-Shockley stackinf faulys according to their shapes. Right-angled triangular ones are either expanded from substrate/epilayer boundary or near the epilayer surface. Tha latter stacking fault was selected by EL experiment and this time, its structural analysis was attempted where the expansion stopped near the substrate/epilaer boundary.