Johji Nishio

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Speaker, Author, Co-Author

Fri. Sep 10, 2021 1:00 PM - 5:00 PM S202 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM

[10p-S202-12] Structural analysis at substrate/epilayer boundary of 1SSF expanded from the surface side in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)