[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

△ [10p-S202-3] Modification of crucible configuration toward high-concentration co-doping of B and N in 4H-SiC

〇Yoma Yamane¹, Lu Weifang¹, Kosuke Yanai¹, Keita Kodera¹, Satosi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:semiconductor, SiC, fluorescent SiC