The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[10p-S203-1~21] 6.3 Oxide electronics

Fri. Sep 10, 2021 1:00 PM - 6:30 PM S203 (Oral)

Akifumi Matsuda(Tokyo Tech), Shoso Shingubara(Kansai Univ.)

1:15 PM - 1:30 PM

[10p-S203-2] Mechanisms of Analog Memristor Operations of Amorphous TaOx Probed on the Atomically Flat Surfaces

Atsushi Tsurumaki-Fukuchi1, Takayoshi Katase2, Hiromichi Ohta3, Masashi Arita1, Yasuo Takahashi1 (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech., 3.RIES, Hokkaido Univ.)

Keywords:memristor, analog memory, tantalum oxide

Toward understanding the mechanisms of analog (memristive) resistive switching phenomena in amorphous TaOx, which are critically important in neuromorphic applications, we fabricated atomically flat thin films of amorphous TaOx on atomically stepped substrates of Nb:SrTiO3 (001) (0.05 wt% Nb). On the surfaces, the ion migration involved in the analog resistive switching was investigated by conductive-probe atomic force microscopy (c-AFM). Thanks to the very uniform mechanical/electrical contacts at the tip/film interfaces, many types of analog resistive switching operations (such as current-dependent analog set and voltage-dependent analog reset) were demonstrated in the transport measurements with c-AFM tip. The important roles of the vertical ion migration by field-induced drift, lateral ion migration by thermal diffusion, and local reversible redox reactions were visually revealed in the processes of analog resistive switching.