1:45 PM - 2:00 PM
[10p-S203-4] Characterization of Photoresponsive Characteristics of Perovskite-type Oxide Resistive Random Access Memory for Artificial Synaptic Device Applications
Keywords:ReRAM, NbSrTiO(NbSTO), Optoelectronics
Oral presentation
6 Thin Films and Surfaces » 6.3 Oxide electronics
Fri. Sep 10, 2021 1:00 PM - 6:30 PM S203 (Oral)
Akifumi Matsuda(Tokyo Tech), Shoso Shingubara(Kansai Univ.)
1:45 PM - 2:00 PM
Keywords:ReRAM, NbSrTiO(NbSTO), Optoelectronics