Oral presentation

[10a-S203-1~9] 6.3 Oxide electronics

Fri. Sep 10, 2021 9:00 AM - 11:30 AM S203 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

△ [10a-S203-1] Capacitance - voltage characteristics of (La_1-xSr_x)VO₃ / p-Si(100) junctions

〇Keisuke Muranushi¹, Hiroki Wadati², Koji Arafune¹, Haruhiko Yoshida¹, Yasushi Hotta¹ (1.Univ. of Hyogo, Eng, 2.Univ. of Hyogo, Sci)

9:15 AM - 9:30 AM

△ [10a-S203-2] Spin current generation in Co₂₀Fe₆₀B₂₀/WO₂ bilayer

〇(M2)Hayato Fujii¹, Kohei Ueda^1,2, Jobu Matsuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ.)

9:30 AM - 9:45 AM

△ [10a-S203-3] Manifold magnetic phase diagram in PrO epitaxial thin films

〇Hirokazu Shimizu¹, Daichi Saito¹, Kenichi Kaminaga^2,3, Daichi Oka¹, Tomoteru Fukumura^1,3,4,5 (1.Tohoku Univ. Sch. Sci., 2.Tohoku Univ. Sch. Eng., 3.Tohoku Univ. AIMR & CRC, 4.Tohoku Univ. CSIS, 5.Tohoku Univ. CSRN)

9:45 AM - 10:00 AM

△ [10a-S203-4] Spin-orbit torque generation in epitaxial SrIrO₃

〇(M2)Sousuke Hori¹, Kohei Ueda^1,2, Takanori Kida³, Masayuki Hagiwara³, Jobu Matuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ., 3.AHMF, Grad. Sch. Sci., Osaka Univ.)

10:00 AM - 10:15 AM

△ [10a-S203-5] Spin Hall magnetoresistance at Pt/MgFe₂O₄ interfaces

〇(M2)Masafumi Sugino¹, Kohei Ueda^1,2, Takanori Kida³, Masayuki Hagiwara³, Jobu Matsuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ., 3.AHMF, Grad. Sch. Sci., Osaka Univ.)

10:30 AM - 10:45 AM

▼ [10a-S203-6] Spin wave propagation characteristics of defect spinel epitaxial γ-Fe_2-xAl_xO₃thin films for magnonics applications

〇(M2)Siyi Tang¹, Md. Shamim Sarker¹, Kaijie Ma¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.the Univ. of Tokyo)

10:45 AM - 11:00 AM

△ [10a-S203-7] Control of B-antisite disorder and observation of exchange bias in double-perovskite-type La₂MnCoO₆ films

〇(M2)Shutong Zhang¹, Ramchandra Sahoo¹, Takuto Soma¹, Miho Kitamura², Koji Horiba^2,3, Hiroshi Kumigashira^2,3,4, Osami Sakata^3,5, Akira Ohtomo^1,3 (1.Tokyo Tech., Chem. Sci. Eng., 2.KEK-IMSS, 3.MCES, 4.Tohoku Univ., IMRAM, 5.NIMS)

11:00 AM - 11:15 AM

△ [10a-S203-8] Synthesis of singe-crystal oxyfluoride thin films by field-effect-induced fluorination

〇Morito Namba¹, Haobo Li¹, Hiroshi Takatsu¹, Hiroshi Kageyama¹ (1.Kyoto Univ.)

11:15 AM - 11:30 AM

△ [10a-S203-9] Examination of thin-film synthesis of layered NbO₂ with topochemical reactions

〇(M1)Aya Sato¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES.)

Oral presentation

[10p-S203-1~21] 6.3 Oxide electronics

Fri. Sep 10, 2021 1:00 PM - 6:30 PM S203 (Oral)

Akifumi Matsuda(Tokyo Tech), Shoso Shingubara(Kansai Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[10p-S203-1] Preparation of transparent ReRAM using (ZnO)_1-x-(SnO₂)_x multi-compomemt n-type oxide semiconductor thin films

〇(M1)Ryota Kobayashi¹, Yutarou Taniguchi¹, Toshihiro Miyata¹ (1.KIT)

1:15 PM - 1:30 PM

[10p-S203-2] Mechanisms of Analog Memristor Operations of Amorphous TaO_x Probed on the Atomically Flat Surfaces

〇Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Hiromichi Ohta³, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech., 3.RIES, Hokkaido Univ.)

1:30 PM - 1:45 PM

[10p-S203-3] First principles calculations of oxygen vacancy in rutile TiO2 under electric fields

〇(M1)Masaki Ninomiya¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Akira Sakai¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[10p-S203-4] Characterization of Photoresponsive Characteristics of Perovskite-type Oxide Resistive Random Access Memory for Artificial Synaptic Device Applications

〇Yutaro Yamazaki¹, Yuta Hashimoto¹, Hiromasa Aoki¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

2:00 PM - 2:15 PM

[10p-S203-5] Stochastic resonance simulation using resistive switching devices considering their characteristics

〇Katsuya Kotake¹, Takuma Ushiku¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

2:15 PM - 2:30 PM

[10p-S203-6] Change in characteristics of NiO thin films by annealing treatment

〇(M1)Ryuya Ito¹, Yuto Ebata¹, Tomoyuki Suzuki¹, Shigeru Yamada¹, Takashi Itoh¹ (1.Gifu Univ.)

2:30 PM - 2:45 PM

[10p-S203-7] Preparation of Cu2O thin film by R.F magnetron sputtering method using power target

〇(M1)Yutaro Taniguchi¹, Ryota kobayashi¹, Toshihiro Miyata¹ (1.KIT)

2:45 PM - 3:00 PM

[10p-S203-8] Fabrication of Oxysulfide Photocatalyst : Y₂Ti₂O₅S₂ Thin Film by Pulsed Laser Deposition Method.

〇Keigo Nakamura¹, Naoto Fukatani¹, Daiko Takamatsu¹, Hiromasa Takahashi¹, Shin Yabuuchi¹, Jun Hayakawa¹ (1.Hitachi Ltd.)

3:00 PM - 3:15 PM

▲ [10p-S203-9] Facile control of V/Bi ratio in bismuth vanadate films by oxygen pressure in sputtering for enhanced photoelectrochemical performance

〇(D)Liu Jiaqi¹, Namiki Uezono¹, Sachin A. Pawar¹, Muhammad Monirul Islam¹, Shigeru Ikeda², Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Konan Univ.)

3:15 PM - 3:30 PM

▲ [10p-S203-10] Influence of graphene quality on the photocatalytic performance of
TiO₂-graphene composite

〇(D)Rahul Deeliprao Deshmukh¹, Yu Kanda¹, Mitsuhiro Honda¹, Yo Ichikawa¹ (1.Nagoya Inst. Tech.)

3:45 PM - 4:00 PM

[10p-S203-11] Interfacial studies on all-solid-state thin-film Li batteries using a sulfide solid electrolyte

〇Yuki Takeda¹, Kazunori Nishio¹, Daisuke Imazeki¹, Kurei Edamura¹, Ryo Nakayama¹, Ryota Shimizu¹, Taro Hitosugi¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

[10p-S203-12] Low-temperature growth of LiCoO₂thin films on Al substrates

〇(M1)Kazuki Ohta¹, Iwao Kawayama¹, Riki Kataoka², Yasushi Maeda², Toshiya Doi¹ (1.Kyoto Univ., 2.AIST)

4:15 PM - 4:30 PM

[10p-S203-13] All-solid-state amorphous thin-film Lithium-ion batteries on polymer substrates

〇Masayasu Yoshida¹, Kenta Tsuji¹, Isaku Kanno¹ (1.Kobe Univ.)

4:30 PM - 4:45 PM

[10p-S203-14] Operando observation of thin-film Li battery using soft X-ray absorption spectroscopy

〇Shigeru Kobayashi¹, Koji Horiba², Miho Kitamura³, Kazunori Nishio¹, Ryota Shimizu¹, Taro Hitosugi¹ (1.Tokyo Tech, 2.QST, 3.KEK)

4:45 PM - 5:00 PM

▲ [10p-S203-15] Electrochemical Control of the Optoelectronic Properties of La-doped BaSnO₃ Epitaxial Films using YSZ as the Solid Electrolyte

〇(D)Mian Wei¹, Hai Jun Cho², Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)

5:00 PM - 5:15 PM

[10p-S203-16] Fabrication of self-powered visible-light-transparent CO₂ sensor composed of p-NiO/ n-ZnO heterojunction structure

〇Tomohiro Hamada¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

5:15 PM - 5:30 PM

[10p-S203-17] Controlling the reactive sputtering depositioncondition of SnO2thin filmsfor improvement the sensitivityof visible-light-transparent CO2sensors

〇Takuto Maeda¹, Yuta Arai¹, Mutumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

5:30 PM - 5:45 PM

[10p-S203-18] Investigation of sensitivity and optical properties on the visible-light-transparent CO₂ sensor using SnO₂ thin films

〇Yuto Uchida¹, Yuta Arai¹, Tomohiro Hamada¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

5:45 PM - 6:00 PM

[10p-S203-19] Fabrication of aluminum oxide thin films by dip-dry deposition

〇Baixian Cheng¹, Ichimura Masaya¹ (1.Nagoya Inst. of Tech.)

6:00 PM - 6:15 PM

[10p-S203-20] Low temperature crystallization of transparent conductor Nb-doped TiO₂ thin film on Al-based alloy substrates

〇(M2)Tomoki Masuyama¹, Ryota Shimizu¹, Taro Hitosugi¹ (1.Tokyo tech)

6:15 PM - 6:30 PM

[10p-S203-21] Fabrication of gallium oxide thin film by spin-coating method and evaluation of its physical properties

〇(M2)Akihiro Momota¹, Miharu Kawano¹, Takuya Shibahara¹, Naoki Ohtani¹ (1.Doshisha Univ.)

Oral presentation

[12a-S203-1~9] 6.3 Oxide electronics

Sun. Sep 12, 2021 9:00 AM - 11:30 AM S203 (Oral)

Hiroyuki Yamada(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[12a-S203-1] [Young Scientist Presentation Award Speech] Electric-field-induced metal-to-insulator transition in YOxHy thin films observed in NaOH solutions

〇Yuya Komatsu¹, Ryota Shimizu¹, Markus Wilde², Kazunori Nishio¹, Katsuyuki Fukutani^2,3, Taro Hitosugi¹ (1.Tokyo Tech, 2.IIS U Tokyo, 3.JAEA)

9:15 AM - 9:30 AM

▼ [12a-S203-2] Lattice Strain and Insulator-to Metal Transition of VO₂ / TiO₂ Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates

〇(D)Binjie Chen¹, Gowoon Kim¹, Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.IST, Hokkaido Univ, 2.RIES, Hokkaido Univ)

9:30 AM - 9:45 AM

△ [12a-S203-3] Effect of Crystal Structure on SrTiO₃/TiO₂ Heterostructure Nanorod Arrays

〇Takaki Kimura¹, Kan Hachiya¹, Takashi Sagawa¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

△ [12a-S203-4] Direct Observation of Electronic Phase Transition in VO₂/W:VO₂ Heterostructures

〇Daisuke Shiga^1,2, Tatsuhiko Kanda¹, Naoto Hasegawa¹, Miho Kitamura², Koji Horiba², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

10:00 AM - 10:15 AM

△ [12a-S203-5] Synthesis of Ti₂O₃ thin films on 4H-SiC (0001) substrates

〇(M2)Satoru Miyazaki¹, Kohei Yoshimatsu¹, Naoto Hasegawa¹, Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

10:30 AM - 10:45 AM

△ [12a-S203-6] Soft X-ray Angle-Resolved Photoemission Study on Ti₂O₃ Thin Films

〇(D)Naoto Hasegawa¹, Kohei Yoshimatsu¹, Daisuke Shiga¹, Tatsuhiko Kanda¹, Satoru Miyazaki¹, Miho Kitamura², Koji Horiba², Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

10:45 AM - 11:00 AM

△ [12a-S203-7] Synthesis of single-crystalline Sn₂Nb₂O₇ thin films by pulsed laser deposition and Ti doping

〇Hiroaki Ito¹, Takahiro Fujita¹, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

11:00 AM - 11:15 AM

▼ [12a-S203-8] Layer-by-layer growth of (111)-oriented LaMnO₃ and LaNiO₃ films

〇(P)Ramchandra Sahoo¹, Shutong Zhang¹, Yuu Takeuchi¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.Tokyo Tech., MCES)

11:15 AM - 11:30 AM

▼ [12a-S203-9] Solid-state electrochemical redox control of
the optoelectronic properties for SrFeO_x thin films

〇(DC)Qian Yang¹, Haijun Cho², Hyoungjeen Jeen³, Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Pusan Nat'l Univ.)

Oral presentation

[12p-S203-1~13] 6.3 Oxide electronics

Sun. Sep 12, 2021 1:00 PM - 4:30 PM S203 (Oral)

Kentaro Kinoshita(Tokyo Univ. of Sci.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

△ [12p-S203-1] Correlation between resistive and electronic states of Resistive Random Access Memory

〇(M2)Kota Sugawara^1,2, Hiroshi Suga^1,2, Yasuhisa Naitoh¹, Hisashi Shima¹, Hiroyuki Akinaga¹ (1.AIST, 2.Chiba Tech)

1:15 PM - 1:30 PM

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

〇(M1)Tomoasa Takada¹, Fukusima Yosiaki¹, Tsuchiya Takashi², Higuchi Tohru¹ (1.Tokyo Univ. Sci., 2.NIMS)

1:30 PM - 1:45 PM

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

〇Taisei Murakami^1,2, Takeo Ohsawa¹, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei univ.)

1:45 PM - 2:00 PM

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaO_x/Ta₂O₅/Pt resistive switching cells

〇(DC)Toshiki Miyatani¹, Kimoto Tsunenobu¹, Nishi Yusuke^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

2:00 PM - 2:15 PM

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr_0.7Ca_0.3MnO_x interface

〇Makoto Imuro¹, Tsunenobu Kimoto¹, Yusuke Nishi^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

2:15 PM - 2:30 PM

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiO_x layer at the ZrO_x/electrode interfaces

〇(M2)Keito Touyama¹, Ryusuke Akiyama¹, Kento yuki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

2:30 PM - 2:45 PM

▼ [12p-S203-7] Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte

〇(DC)GOWOON KIM¹, Hai Jun Cho², Hiromichi Ohta² (1.IST-Hokkaido University, 2.RIES-Hokkaido University)

2:45 PM - 3:00 PM

△ [12p-S203-8] Li-ion intercalation to LiV₂O₄ epitaxial films and in-situ structural analysis

〇Tatsuya Yajima¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech, 2.MCES)

3:15 PM - 3:30 PM

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

〇Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

3:30 PM - 3:45 PM

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films

〇(P)Xi Zhang¹, Yuqiao Zhang¹, Liao Wu², Hai Jun Cho¹, Hiromichi Ohta¹ (1.RIES Hokkaido Univ., 2.IST Hokkaido Univ.)

3:45 PM - 4:00 PM

△ [12p-S203-11] Fabrication of Epitaxial InSb Thin Film on Various Perovskite Oxide Substrates

〇Koomok Lee¹, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1.MSL TokyoTech., 2.KISTEC)

4:00 PM - 4:15 PM

△ [12p-S203-12] Effect of excimer VUV-light on structure and properties of epitaxial NiO thin films

〇(M2)Kenta Kaneko¹, Hiroki Shoji¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

4:15 PM - 4:30 PM

△ [12p-S203-13] Fabrication of p-type transparent SnO films and examination of sulfurization process with using solution reactions

〇Suguri Uchida¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

Oral presentation

[13a-S203-1~9] 6.3 Oxide electronics

Mon. Sep 13, 2021 9:00 AM - 11:30 AM S203 (Oral)

Wakabayashi Yuki(NTT), Kohei Ueda(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[13a-S203-1] Mott transition of SrVO₃ ultra-thin films grown by gas source MBE

〇KEI S TAKAHASHI¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,3 (1.RIKEN CEMS, 2.Tokyo College, Univ. of Tokyo, 3.Dept. of Appl. Phys., Univ. of Tokyo)

9:15 AM - 9:30 AM

[13a-S203-2] Metal-insulator transition of SrNbO₃ ultrathin films

〇Hikaru Okuma¹, Yumiko Katayama¹, Reon Sakakibara¹, Kyoka Hamamoto¹, Fukunobu Kadowaki¹, Kazunori Ueno¹ (1.Univ. Tokyo)

9:30 AM - 9:45 AM

[13a-S203-3] Wide-range epitaxial strain control of electrical and magnetic properties
in high-quality SrRuO₃ films

〇Yuuki Wakabayashi¹, Shingo Kaneta-Takada¹, Yoshiharu Krockenberger¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL)

9:45 AM - 10:00 AM

[13a-S203-4] Off-stoichiometry effects on the structural and transport properties of epitaxial SrRu_xO₃(x= 0.7 and 1) thin films

〇Yuuki Wakabayashi¹, Shingo Kaneta-Takada^1,2, Yoshiharu Krockenberger¹, Kosuke Takiguchi^1,2, Shinobu Ohya², Masaaki Tanaka², Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL, 2.The Univ. of Tokyo)

10:00 AM - 10:15 AM

[13a-S203-5] Fabrication of rhombohedral LaCuO₃ thin films using the oxidation effect of NaClO solution

〇Shutaro Asanuma¹ (1.AIST)

10:30 AM - 10:45 AM

[13a-S203-6] Reduction in resistivity of MOCVD-grown CuO thin films by post-annealing

〇Mitsunobu Narushima¹, Shinya Ise¹, kohei Kawai¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst of Tech., 2.Int. Res. Center for Green Electronics)

10:45 AM - 11:00 AM

[13a-S203-7] UV sensing mechanism of nanothick TiO₂ channel thin-film transistors

〇Fumihiko Hirose¹ (1.Yamagata Univ.)

11:00 AM - 11:15 AM

▲ [13a-S203-8] Extremely large strain in rutile-type RuO₂(100) epitaxial thin films

〇(DC)Zainab Fatima¹, Daichi Oka¹, Tomoteru Fukumura¹ (1.Tohoku Univ.)

11:15 AM - 11:30 AM

▲ [13a-S203-9] First-principles study of structural and electronic properties of graphene/MoS_{2} heterostructure

〇(D)Dian Putri Hastuti¹, Kenji Nawa¹, Kohji Nakamura¹ (1.Mie University)

Oral presentation

[13p-S203-1~15] 6.3 Oxide electronics

Mon. Sep 13, 2021 1:00 PM - 5:00 PM S203 (Oral)

Takahiro Fujita(Univ. Tokyo), Takuto Soma(Tokyo Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

[13p-S203-1] The relationship between proton behavior and resistance modulation properties of the NdNiO₃ resistor structure

〇Akira Namba¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ.)

1:15 PM - 1:30 PM

[13p-S203-2] Hydrogen-induced high resistivity phenomenon in NdNiO₃ thin films and its density functional theory simulations

〇Yuki Taniguchi¹, Musa Alaydrus², Ikutaro Hamada², Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ, 2.Eng , Osaka Univ)

1:30 PM - 1:45 PM

▲ [13p-S203-3] Hydrogenation Induced Phase Transition Modulation in Perovskite Nickelates Assisted by Metal-Acid System

〇(PC)HUI REN¹, Ai Osaka¹, Azusa Hattori¹, Boyuan Yu¹, Chongwen Zou², Hidekazu Tanaka¹ (1.SANKEN for Osaka University, 2.NSRL for University of Science and Technology of China)

1:45 PM - 2:00 PM

[13p-S203-4] Colossal gate modulation of the VO₂ phase transition speed in solid-state devices

〇Takeaki Yajima¹, Yusai Wakafuji², Akira Toriumi² (1.Kyushu Univ., 2.Univ. of Tokyo)

2:00 PM - 2:15 PM

▲ [13p-S203-5] The dependence of phase temperature on the planarly confined VO₂ structures

〇(M1)Rui Li¹, Ai Osaka¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ.)

2:15 PM - 2:30 PM

▲ [13p-S203-6] Preparation of VO₂ ultra-thin films on the hexagonal Boron Nitride and their thicknesses dependence of electrical properties

〇(DC)Boyuan Yu¹, Shingo Genchi¹, Mahito Yamamoto², Kenji Watanabe³, Takashi Taniguchi³, Yasukazu Murakami⁴, Takehiro Tamaoka⁴, Hidekazu Tanaka¹ (1.Sanken, Osaka Univ, 2.Kansai Univ, 3.NIMS, 4.Kyushu Univ)

2:30 PM - 2:45 PM

[13p-S203-7] Effects of epitaxial strain on the electronic states of perovskite-type vanadates: analyses based on Fermi liquid theory and band calculation

〇Takuto Soma¹, Hirokazu Okabe¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)

3:00 PM - 3:15 PM

[13p-S203-8] Fabrication of conductive spinel oxide CoV2O₄(001) epitaxial thin films

〇Atsushi Hidaka¹, Hiroki Koizumi¹, Hideto Yanagihara¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

[13p-S203-9] Elaboration of In-Gap States Leading Deterioration of Ambipolar Operation in SnO Thin-Film Transistors

〇Makoto Minohara¹, Shutaro Asanum¹, Hidehiro Asai¹, Yuka Dobashi², Akane Samizoo², Yasuhisa Tezuka³, Kenichi Ozawa^4,5, Kazuhiko Mase^5,6, Naoto Kikuchi¹, Yoshihiro Aiura¹ (1.AIST, 2.Tokyo Univ. Sci., 3.Hirosaki Univ., 4.Tokyo Tech., 5.KEK, 6.SOKENDAI)

3:30 PM - 3:45 PM

[13p-S203-10] Fabrication of Transparent ZnO/Cu-Mg(OH)₂ Heterojunction Diodes by Electrochemical Deposition

〇Masaya Tanaka¹, Masaya Ichimura¹ (1.Nagoya Inst. of Tech.)

3:45 PM - 4:00 PM

[13p-S203-11] Quenching high-pressure phase CaSiO₃ perovskite by epitaxial stabilization

〇(DC)Yuki Sasahara¹, Ryota Shimizu¹, Norimasa Nishiyama^2,3, Masaki Azuma³, Taro Hitosugi¹ (1.Tokyo Tech, 2.SEI, 3.MSL)

4:00 PM - 4:15 PM

[13p-S203-12] Ir doped LSMO epitaxial thin film on LSAT substrate with perpendicular magnetic anisotropy

〇Kenichi Kaminaga¹, Kanta Suzuki¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

4:15 PM - 4:30 PM

[13p-S203-13] Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junction with an NiCo₂O₄ Electrode

〇Yoshinori Hara¹, Asaka Tsujie¹, Toshihiro Shimada², Taro Nagahama² (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)

4:30 PM - 4:45 PM

[13p-S203-14] Nonlinear spin Hall effect in SrIrO₃ thin films revealed by first-principles calculations

〇Yusuke Kozuka¹, Keisuke Masuda¹, Yoshio Miura¹, Jun Fujioka², Shinji Isogami¹, Saikat Das¹, Tadakatsu Ohkubo¹, Shinya Kasai^1,3 (1.NIMS, 2.Univ. Tsukuba, 3.JST-PRESTO)

4:45 PM - 5:00 PM

[13p-S203-15] Stack order effect of spin-orbit torque in Ni₈₁Fe₁₉-IrO₂ bilayers

〇Kohei Ueda^1,2, Takanori Kida³, Masayuki Hagiwara³, Jobu Matsuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ., 3.AHMF, Grad. Sch. Sci., Osaka Univ.)

Poster presentation

[22a-P03-1~16] 6.3 Oxide electronics

Wed. Sep 22, 2021 9:00 AM - 10:40 AM P03 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 10:40 AM

[22a-P03-1] Spin Hall magnetoresistance in a Pt/La_2/3Ba_1/3MnO₃ bilayer

〇(M1)Aritsune Hirose¹, Kohei Ueda^1,2, Masaya Okochi¹, Takanori Kida³, Masayuki Hagiwara³, Jobu Matsuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ., 3.AHMF, Grad. Sch. Sci., Osaka Univ.)

9:00 AM - 10:40 AM

[22a-P03-2] Low-temperature reduction and Sr doping of NdNiO₃ films towards superconductivity

〇(M2)Takuya Togehara¹, Kohei Ueda^1,2, Shigeki Miyasaka¹, Jobu Matsuno^1,2 (1.Osaka Univ., 2.CSRN, Osaka Univ.)

9:00 AM - 10:40 AM

[22a-P03-3] Spin current generation in a Co₂₀Fe₆₀B₂₀/polycrystalline IrO₂ bilayer

〇Tetsuro Morimoto¹, Kohei Ueda^1,2, Jobu Matsuno^1,2 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ.)

9:00 AM - 10:40 AM

[22a-P03-4] Neuromorphic current response of Pt/Ti_1-xFe_xO_2-_d/Pt cross-point structure

〇(M2)Yosiaki Fukusima¹, Junitirou Ishida¹, Takada Tomoasa¹, Horiba Koji², Kumigashira Hiroshi^2,3, Higuchi Tohru¹ (1.Tokyo Univ. Sci., 2.KEK, 3.IMRAM, Tohoku Univ)

9:00 AM - 10:40 AM

[22a-P03-5] Resistive switching device using surface oxide film of Hf-doped liquid metal alloy

〇Meguru Nagai¹, Naoki Maeda¹, Yuji Miyato¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

9:00 AM - 10:40 AM

[22a-P03-6] Evaluation of g-C₃N₄photocatalytic performance with Light Emitting Diode

〇Taichi Shiotsu¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

9:00 AM - 10:40 AM

[22a-P03-7] Pulse-electrodeposition of dense and (002)-oriented ZnO films on pretreated substrate
and their application to photorechargeable battery

〇Reo Higashi¹, Udou Naoki¹, Nomiyama Teruaki¹, Horie Yuji¹, Kokeguchi Akira² (1.Kagoshima Univ., 2.Joyson Safety Systems Japan K.K.)

9:00 AM - 10:40 AM

[22a-P03-8] Effect of structure of α-Fe₂O₃-sensitized WO₃ nanofiber on photocharge/discharge characteristics

〇Yutaro Nagabuchi¹, Kazuki Taguchi¹, Yuji Horie¹, Teruaki Nomiyama¹ (1.Kagoshima Univ.)

9:00 AM - 10:40 AM

[22a-P03-9] Evaluation of catalytic reaction of g-C₃N₄ powders due to difference in annealing

〇masaki tachikawa¹, Taichi Shiotsu¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

9:00 AM - 10:40 AM

[22a-P03-10] Evaluation of apoferritin by UV irradiation

〇Yudai Kawasaki¹, Naohumi Okamoto², Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.NAIST.)

9:00 AM - 10:40 AM

[22a-P03-11] Introduction of lattice strain for solid electrolyte Na₃OBr to improve ionic conductivity

〇Hiroaki Asakawa¹, Wei Shi¹, Mariko Murayama¹, Xinwei Zhao¹ (1.Tokyo Univ. of Sci.)

9:00 AM - 10:40 AM

[22a-P03-12] Ionic conductivity at the interface between electrospun nanofiber storage electrode and solid electrolyte

〇Yuki Nakagama¹, Hitoshi Nishida¹, Shingo Kawasaki¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

9:00 AM - 10:40 AM

[22a-P03-13] Production of La_1-xSr_xMnO₃ thin films by Metal Organic Decomposition (MOD) method
and their electrical- and magneto-conduction properties(II)

〇Kohei Hamada¹, Ayumu Nisiyama¹, Harunobu Kataoka¹, Hiromi Kobori¹, Atushi Yamasaki¹ (1.Konan Univ.)

9:00 AM - 10:40 AM

[22a-P03-14] Epitaxial Growth of α-V₂O₃ thin films by mist-CVD method

〇Kazuaki Akaiwa¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ.)

9:00 AM - 10:40 AM

[22a-P03-15] Phase tuning of oriented vanadium oxide thin films by uniaxial compression annealing

〇(M1)Hiroki Shoji¹, Kenta Kaneko¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

9:00 AM - 10:40 AM

[22a-P03-16] Crystallinity analysis of SrTiO₃ single crystals

〇Hanako Kuramochi¹, Christo Guguschev², Taizo Mori¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo, 2.Leibnitz Inst. for Crystal Growth)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[10a-S203-1~9] 6.3 Oxide electronics

△ [10a-S203-1] Capacitance - voltage characteristics of (La1-xSrx)VO3 / p-Si(100) junctions

△ [10a-S203-2] Spin current generation in Co20Fe60B20/WO2 bilayer

△ [10a-S203-3] Manifold magnetic phase diagram in PrO epitaxial thin films

△ [10a-S203-4] Spin-orbit torque generation in epitaxial SrIrO3

△ [10a-S203-5] Spin Hall magnetoresistance at Pt/MgFe2O4 interfaces

▼ [10a-S203-6] Spin wave propagation characteristics of defect spinel epitaxial γ-Fe2-xAlxO3 thin films for magnonics applications

△ [10a-S203-7] Control of B-antisite disorder and observation of exchange bias in double-perovskite-type La2MnCoO6 films

△ [10a-S203-8] Synthesis of singe-crystal oxyfluoride thin films by field-effect-induced fluorination

△ [10a-S203-9] Examination of thin-film synthesis of layered NbO2 with topochemical reactions

[10p-S203-1~21] 6.3 Oxide electronics

▲ [10p-S203-9] Facile control of V/Bi ratio in bismuth vanadate films by oxygen pressure in sputtering for enhanced photoelectrochemical performance

▲ [10p-S203-10] Influence of graphene quality on the photocatalytic performance ofTiO2-graphene composite

▲ [10p-S203-15] Electrochemical Control of the Optoelectronic Properties of La-doped BaSnO3 Epitaxial Films using YSZ as the Solid Electrolyte

[12a-S203-1~9] 6.3 Oxide electronics

▼ [12a-S203-2] Lattice Strain and Insulator-to Metal Transition of VO2 / TiO2 Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates

△ [12a-S203-3] Effect of Crystal Structure on SrTiO3/TiO2 Heterostructure Nanorod Arrays

△ [12a-S203-4] Direct Observation of Electronic Phase Transition in VO2/W:VO2 Heterostructures

△ [12a-S203-5] Synthesis of Ti2O3 thin films on 4H-SiC (0001) substrates

△ [12a-S203-6] Soft X-ray Angle-Resolved Photoemission Study on Ti2O3 Thin Films

△ [12a-S203-7] Synthesis of single-crystalline Sn2Nb2O7 thin films by pulsed laser deposition and Ti doping

▼ [12a-S203-8] Layer-by-layer growth of (111)-oriented LaMnO3 and LaNiO3 films

▼ [12a-S203-9] Solid-state electrochemical redox control of the optoelectronic properties for SrFeOx thin films

[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-1] Correlation between resistive and electronic states of Resistive Random Access Memory

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti0.96Co0.04O2-δ/Pt thin films

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaOx/Ta2O5/Pt resistive switching cells

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr0.7Ca0.3MnOx interface

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiOx layer at the ZrOx/electrode interfaces

▼ [12p-S203-7] Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte

△ [12p-S203-8] Li-ion intercalation to LiV2O4 epitaxial films and in-situ structural analysis

△ [12p-S203-9] High speed resistive switching in Ca2RuO4 thin films driven by the current-induced metal-insulator transition

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba1/3CoO2 Epitaxial Films

△ [12p-S203-11] Fabrication of Epitaxial InSb Thin Film on Various Perovskite Oxide Substrates

△ [12p-S203-12] Effect of excimer VUV-light on structure and properties of epitaxial NiO thin films

△ [12p-S203-13] Fabrication of p-type transparent SnO films and examination of sulfurization process with using solution reactions

[13a-S203-1~9] 6.3 Oxide electronics

▲ [13a-S203-8] Extremely large strain in rutile-type RuO2(100) epitaxial thin films

▲ [13a-S203-9] First-principles study of structural and electronic properties of graphene/MoS_{2} heterostructure

[13p-S203-1~15] 6.3 Oxide electronics

▲ [13p-S203-3] Hydrogenation Induced Phase Transition Modulation in Perovskite Nickelates Assisted by Metal-Acid System

▲ [13p-S203-5] The dependence of phase temperature on the planarly confined VO2 structures

▲ [13p-S203-6] Preparation of VO2 ultra-thin films on the hexagonal Boron Nitride and their thicknesses dependence of electrical properties

[22a-P03-1~16] 6.3 Oxide electronics

Authenticate

△ [10a-S203-1] Capacitance - voltage characteristics of (La_1-xSr_x)VO₃ / p-Si(100) junctions

△ [10a-S203-2] Spin current generation in Co₂₀Fe₆₀B₂₀/WO₂ bilayer

△ [10a-S203-4] Spin-orbit torque generation in epitaxial SrIrO₃

△ [10a-S203-5] Spin Hall magnetoresistance at Pt/MgFe₂O₄ interfaces

▼ [10a-S203-6] Spin wave propagation characteristics of defect spinel epitaxial γ-Fe_2-xAl_xO₃thin films for magnonics applications

△ [10a-S203-7] Control of B-antisite disorder and observation of exchange bias in double-perovskite-type La₂MnCoO₆ films

△ [10a-S203-9] Examination of thin-film synthesis of layered NbO₂ with topochemical reactions

▲ [10p-S203-10] Influence of graphene quality on the photocatalytic performance of
TiO₂-graphene composite

▲ [10p-S203-15] Electrochemical Control of the Optoelectronic Properties of La-doped BaSnO₃ Epitaxial Films using YSZ as the Solid Electrolyte

▼ [12a-S203-2] Lattice Strain and Insulator-to Metal Transition of VO₂ / TiO₂ Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates

△ [12a-S203-3] Effect of Crystal Structure on SrTiO₃/TiO₂ Heterostructure Nanorod Arrays

△ [12a-S203-4] Direct Observation of Electronic Phase Transition in VO₂/W:VO₂ Heterostructures

△ [12a-S203-5] Synthesis of Ti₂O₃ thin films on 4H-SiC (0001) substrates

△ [12a-S203-6] Soft X-ray Angle-Resolved Photoemission Study on Ti₂O₃ Thin Films

△ [12a-S203-7] Synthesis of single-crystalline Sn₂Nb₂O₇ thin films by pulsed laser deposition and Ti doping

▼ [12a-S203-8] Layer-by-layer growth of (111)-oriented LaMnO₃ and LaNiO₃ films

▼ [12a-S203-9] Solid-state electrochemical redox control of
the optoelectronic properties for SrFeO_x thin films

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaO_x/Ta₂O₅/Pt resistive switching cells

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr_0.7Ca_0.3MnO_x interface

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiO_x layer at the ZrO_x/electrode interfaces

△ [12p-S203-8] Li-ion intercalation to LiV₂O₄ epitaxial films and in-situ structural analysis

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films

▲ [13a-S203-8] Extremely large strain in rutile-type RuO₂(100) epitaxial thin films

▲ [13p-S203-5] The dependence of phase temperature on the planarly confined VO₂ structures

▲ [13p-S203-6] Preparation of VO₂ ultra-thin films on the hexagonal Boron Nitride and their thicknesses dependence of electrical properties