Improvement of ReRAM characteristics by insertion of SiO<sub>x</sub> layer at the ZrO<sub>x</sub>/electrode interfaces

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Sun. Sep 12, 2021 1:00 PM - 4:30 PM S203 (Oral)

Kentaro Kinoshita(Tokyo Univ. of Sci.)

2:15 PM - 2:30 PM

〇(M2)Keito Touyama¹, Ryusuke Akiyama¹, Kento yuki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:ReRAM