Elaboration of In-Gap States Leading Deterioration of Ambipolar Operation in SnO Thin-Film Transistors

Makoto Minohara; Shutaro Asanum; Hidehiro Asai; Yuka Dobashi; Akane Samizoo; Yasuhisa Tezuka; Kenichi Ozawa; Kazuhiko Mase; Naoto Kikuchi; Yoshihiro Aiura

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-S203-1~15] 6.3 Oxide electronics

Mon. Sep 13, 2021 1:00 PM - 5:00 PM S203 (Oral)

Takahiro Fujita(Univ. Tokyo), Takuto Soma(Tokyo Tech.)

3:15 PM - 3:30 PM

[13p-S203-9] Elaboration of In-Gap States Leading Deterioration of Ambipolar Operation in SnO Thin-Film Transistors

〇Makoto Minohara¹, Shutaro Asanum¹, Hidehiro Asai¹, Yuka Dobashi², Akane Samizoo², Yasuhisa Tezuka³, Kenichi Ozawa^4,5, Kazuhiko Mase^5,6, Naoto Kikuchi¹, Yoshihiro Aiura¹ (1.AIST, 2.Tokyo Univ. Sci., 3.Hirosaki Univ., 4.Tokyo Tech., 5.KEK, 6.SOKENDAI)

Keywords:p-type oxide semiconductor, Thin-Film Transistor, Photoemission spectroscopy