[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

〇Taisei Murakami^1,2, Takeo Ohsawa¹, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei univ.)

Keywords:Resistans random accsess memory, Colossal electro resistance

Colossal electro resistance (CER) has been observed in Pt/Nb:SrTiO₃ junctions. We have investigated the CER behavior through electrical and photoemission measurements. In this study, we find the changes in the CER behavior for oxygen- and hydrogen-treated Pt/Nb:SrTiO₃ junctions prepared by magnetron sputtering.