One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate

Takeaki Hamachi; Tetsuya Tohei; Yusuke Hayashi; Masayuki Imanishi; Shigeyoshi Usami; Yusuke Mori; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-N101-1~9] 15.4 III-V-group nitride crystals

Sat. Sep 11, 2021 9:00 AM - 11:30 AM N101 (Oral)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

10:30 AM - 10:45 AM

△ [11a-N101-6] One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Shigeyoshi Usami², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Gallium Nitride, Threading dislocation, Leakage current