[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO₂

〇JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

Keywords:Ferroelectric undoped HfO2, Pt gate electrode, RF magnetron sputtering

In this research, we investigated the influence of sputtering power for Pt gate electrode deposition to improve the ferroelectricity of 5 nm thick undoped HfO₂ formation. Because of the improvement of interface property with the smallest density of states, the lowest leakage current was observed in case of 40 W. Furthermore, the ferroelectricity of 5 nm thick HfO₂ was improved with the largest remnant polarization (2P_r) due to the suppression of charge injection phenomenon by the sputtering power of 40 W.
Therefore, low sputtering power of 40 W for Pt electrode deposition was effective to improve the ferroelectricity of 5 nm thick undoped HfO₂.