[11a-N205-1~11] CS.9 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [11a-N205-7] Antiferroelectric properties in ALD ZrO₂ ultra-thin films and their relations with the crystalline phases

〇(DC)Xuan Luo¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

キーワード：antiferroelectric, ZrO2, crystalline structure

We report a strong correlation between the antiferroelectric (AFE)-like properties and crystalline structures of ZrO₂ ultra-thin films prepared by atomic layer deposition, based on the dependence of AFE properties on the film thickness and post metallization annealing temperature. It is found that the maximum and the remanent polarization in the P-E characteristics can be well explained by the relative ratio of t- and o-phase, estimated by Automated Crystal Orientation Mapping in Transmission Electron Microscopy (ACOM-TEM).