〇Hirokazu Fujiwara¹, Toshiyuki Taniuchi², Cedric Bareille², Masaharu Kobayashi³, Shik Shin^2,4 (1.ISSP, 2.MIRC, 3.d.lab, 4.The Univ. of Tokyo)

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

〇JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

〇(M2)Mizuki Saito¹, Mohit Mohit¹, Eisuke Tokumitsu¹ (1.JAIST)

〇Kento Izumi¹, Yuto Ota¹, Hikaru Kawarazaki², Hideaki Tanimura², Shinichi Kato², Yasuo Nara¹ (1.Univ. of hyogo, 2.SCREEN semicon.)

〇(PC)Takashi Onaya^1,2,3, Toshihide Nabatame², Mari Inoue², Tomomi Sawada², Hiroyuki Ota¹, Yukinori Morita¹ (1.AIST, 2.NIMS, 3.JSPS Research Fellow PD)

〇(DC)Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

〇Kasidit Toprasertpong¹, Kento Tahara¹, Yukinobu Hikosaka², Ko Nakamura², Hitoshi Saito², Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.Fujitsu Semiconductor Memory Solution)

〇(M2)Xiaoran Mei¹, Fei Mo¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

Fei Mo¹, Jiawen Xiang¹, Xiaoran Mei¹, Yoshiki Sawabe¹, Takuya Saraya¹, Toshiro Hiramoto¹, Chun-Jung Su², Vita Pi-Ho Hu³, 〇Masaharu Kobayashi^1,4 (1.IIS, Univ. Tokyo, 2.TSRI, 3.Nat. Taiwan Univ., 4.d.lab, Univ. Tokyo)

〇(P)Jixuan Wu¹, Fei Mo¹, Takuya Saraya¹, Toshiro Hiramoto¹, Mototaka Ochi², Hiroshi Goto³, Masaharu Kobayashi^1,4 (1.IIS, Univ. of Tokyo, 2.Kobe Steel, Ltd, 3.Kobelco Inst., Inc, 4.d.lab,Univ. of Tokyo)