[11a-N205-1~11] CS.9 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [11a-N205-11] Monolithic Integration of FET and Ferroelectric-Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application

〇(P)Jixuan Wu¹、Fei Mo¹、Takuya Saraya¹、Toshiro Hiramoto¹、Mototaka Ochi²、Hiroshi Goto³、Masaharu Kobayashi^1,4 (1.IIS, Univ. of Tokyo、2.Kobe Steel, Ltd、3.Kobelco Inst., Inc、4.d.lab,Univ. of Tokyo)

キーワード：Oxide semiconductor, FE-capacitor, Embedded memory

The proximity of high-density memory to processor core has become more and more important for the last level cache in the conventional architecture and for machine-learning accelerator in AI chip. Recently, oxide semiconductor such as InGaZnO (IGZO) [1-3] has been attracting attentions because transistors can be placed in BEOL layers thanks to its low temperature process. High-density and energy-efficient embedded memory system can be achieved by integrating both access transistor and memory element in BEOL layers. Integration of oxide semiconductor FET and FE-HfO₂ can be a feasible approach for 3D embedded RAM application such as eDRAM and FeRAM [4-5]. In this work, we introduce Sn-doped IGZO (IGZTO) [7], develop and integrate FET and FE-capacitor (FE-cap) and demonstrate 1T1C operation. We discuss the impact of IGZTO FET on 1T1C cell and the physics of mobility enhancement.