[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

[11a-N205-8] Low-Voltage Retention and Endurance Improvement of Ferroelectric Hf_xZr_1-xO₂ by Thickness Scaling

〇Kasidit Toprasertpong¹, Kento Tahara¹, Yukinobu Hikosaka², Ko Nakamura², Hitoshi Saito², Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.Fujitsu Semiconductor Memory Solution)

Keywords:Ferroelectric HfO2, Thin film, Reliability

Ferroelectric HfO₂, particularly Hf_xZr_1-xO₂, is a promising material for embedded FeRAM in advanced LSI owing to its comparatively high CMOS compatability. However, the large operating voltage and poor breakdown tolerance are the two main challenges of this material. In this study, we report our finding that the thickness scaling of Hf_xZr_1-xO₂ films is a potential solution for the reduction of operating voltage as well as the improvement of the low-voltage retention property and the endurance characteristics.