[11a-N302-1~11] 17.3 Layered materials

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

〇Mitsuhiro OKADA¹, Yung-Chang Lin¹, Iori Kikuchi², Naoya Okada¹, Wen Hsin Chang¹, Tetsuo Shimizu¹, Toshitaka Kubo¹, Jiang Pu², Taishi Takenobu², Takatoshi Yamada¹, Toshifumi Irisawa¹ (1.AIST, 2.Nagoya Univ.)

Keywords:Transition metal dichalcogenides, CVD, Phase-enginnering