Oral presentation

[11a-N302-1~11] 17.3 Layered materials

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N302 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N302-1] Synthesis of NbS₂ thin films showing superconductivity by chemical vapor deposition

〇Shoki Arasawa¹, Taro Nagahama², Takashi Yanase³, Toshihiro Shimada² (1.CSE.Hokkaido Univ., 2.Eng.Hokkaido Univ., 3.Toho Univ.)

9:15 AM - 9:30 AM

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

〇Mitsuhiro OKADA¹, Yung-Chang Lin¹, Iori Kikuchi², Naoya Okada¹, Wen Hsin Chang¹, Tetsuo Shimizu¹, Toshitaka Kubo¹, Jiang Pu², Taishi Takenobu², Takatoshi Yamada¹, Toshifumi Irisawa¹ (1.AIST, 2.Nagoya Univ.)

9:30 AM - 9:45 AM

[11a-N302-3] Growth mechanism of InSe in metal organic chemical vapor deposition

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

9:45 AM - 10:00 AM

▼ [11a-N302-4] Synthesis of 2D MoS₂ and WS_1-xSe_x thin films by Mist-CVD

〇(D)Abdul A Kuddus¹, Arifuzzaman Rajib¹, Kizaki Ryotaro¹, Yokoyama Kojun¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University)

10:00 AM - 10:15 AM

△ [11a-N302-5] Fabrication of MoS₂ Films by Reactive Sputtering Method

〇(D)Myeongok Kim^1,2, Maxime Giteau¹, Naoya Miyashita¹, Yoshitaka Okada^1,2 (1.RCAST UTokyo, 2.Grad. School of Eng. UTokyo)

10:15 AM - 10:30 AM

△ [11a-N302-6] Deposition of n-SnSe thin films doped with Bi

〇(M2)Kohei Ishigai¹, Ryoji Katsube¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[11a-N302-7] Mechanism of monolayer to bilayer silicene transformation in CaSi₂ due to fluorine diffusion

〇Akihiro Nagoya¹, Ritsuko Yaokawa¹, Nobuko Ohba¹ (1.TCRDL)

11:00 AM - 11:15 AM

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS₂

〇(M1)Yuta Iwamoto¹, Xiaoming Qiang¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ.)

11:15 AM - 11:30 AM

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS₂ nanosheet

〇(D)Lilin Xie¹, Yoshifumi Oshima¹ (1.JAIST)

11:30 AM - 11:45 AM

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sized
Graphite-FeCl₃ intercalation compound

〇(M2)Harsh Chandra¹, Junichiro Shiomi¹ (1.The Univ. of Tokyo)

11:45 AM - 12:00 PM

[11a-N302-11] Mechanism of sonication-based selective preparation of 2D thin-layers

〇Tatsuya Nakamoto¹, Takeshi Yoshimura¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

Oral presentation

[11p-N302-1~13] 17.3 Layered materials

Sat. Sep 11, 2021 1:30 PM - 5:00 PM N302 (Oral)

Takamasa Kawanago(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[11p-N302-1] Quantitative Judgement of Inconsistent Band Gap Values for Bulk PdSe₂ from Electrical Transport Properties

〇Wataru Nishiyama¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. Tokyo, 2.Saitama Univ., 3.NIMS)

1:45 PM - 2:00 PM

[11p-N302-2] Transport mechanism of metallic MoS₂ by junction with strong donor molecules

〇Keigo Matsuyama¹, Takeshi Yoshimura¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

2:00 PM - 2:15 PM

[11p-N302-3] Mechanical and electric properties of MoS₂ nanoribbons under uniaxial strain

〇Susumu Okada¹, Mina Maruyama¹, Yanlin Gao¹ (1.Univ. Tsukuba)

2:15 PM - 2:30 PM

[11p-N302-4] Interfacial electronic modulation of molybdenum disulfide and ionic chemicals

〇Daisuke Kimura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

2:30 PM - 2:45 PM

[11p-N302-5] Preparation of twisted multilayer MoS₂ by dry transfer

〇Hibiki Naito¹, Yusuke Nakanishi¹, Hong En Lim¹, Takahiko Endo¹, Kenji Watanabe², Takashi Taniguchi², Yasumitsu Miyata¹ (1.Tokyo Metro. Univ., 2.NIMS)

2:45 PM - 3:00 PM

[11p-N302-6] Fabrication of two-dimensional layered heterostructures using household PVC wraps

〇Yusai Wakafuji¹, Rai Moriya¹, Momoko Onodera¹, Satoru Masubuchi², Kenji Watanabe², Takashi Taniguchi^2,1, Tomoki Machida^1,3 (1.IIS Univ. Tokyo, 2.NIMS, 3.CREST-JST)

3:00 PM - 3:15 PM

▲ [11p-N302-7] Anomalous hysteresis in dual-gate h-BN/WTe₂/h-BN van der Waals junction devices

〇Xiaohan Yang¹, Yijin Zhang¹, Eisuke Watanabe¹, Satoru Masubuchi¹, Rai Moriya¹, Shota Okazaki², Takao Sasagawa², Mina Maruyama³, Susumu Okada³, Kenji Watanabe⁴, Takashi Taniguchi^1,4, Tomoki Machida^1,5 (1.IIS Univ. Tokyo, 2.MSL-Tokyo Tech., 3.Tsukuba Univ., 4.NIMS, 5.CREST-JST)

3:15 PM - 3:30 PM

[11p-N302-8] Effect of fluorine plasma treatment on multilayer MoS₂analyzed by field-effect transistor characteristics

〇(M1)Hiroki Kii¹, Ryo Nouchi^1,2 (1.Osaka Prefecture Univ., 2.JST-PRESTO)

3:45 PM - 4:00 PM

▲ [11p-N302-9] UV/Thermally Induced Isomerization of Spiropyran on MoS₂ Lattice

〇(D)MuhammadShamimAl Mamun¹, Yasuyuki Sainoo², Tsuyoshi Takaoka², Hiroki Waizumi¹, Zhipeng Wang¹, Md Iftekharul Alam¹, Kosei Takahashi¹, Atsushi Ando³, Ryuichi Arafune⁴, Tadahiro Komeda² (1.Tohoku University, 2.IMRAM, Tagen, 3.AIST, 4.NIMS)

4:00 PM - 4:15 PM

[11p-N302-10] Nanoscale infrared spectroscopy measurement of few-layer hexagonal boron nitride

〇MAKOTO TAKAMURA¹, Kenji Watanabe², Takashi Taniguchi², Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs., 2.NIMS)

4:15 PM - 4:30 PM

[11p-N302-11] Mechanism of the improvement of
photoluminescence intensity for monolayer WS₂ by paraffin coating

〇Takahiro Nakahara¹, Takeshi Yoshimura¹, Norihumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

[11p-N302-12] Electric field modulation of MoS₂ by ionic liquids mixed with inorganic ions

〇Riku Mochizuki¹, Keigo Matsuyama¹, Akito Fukui¹, Takeshi Yoshimura¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

4:45 PM - 5:00 PM

[11p-N302-13] Microcavity light-emitting device using transition metal dichalcogenides

〇Soma Suzuki¹, Tomohiro Ogura¹, Takahiko Endo², Yasumitsu Miyata², Kenichi Yamashita³, Jiang Pu¹, Taishi Takenobu¹ (1.Nagoya Univ., 2.Tokyo Metropolitan Univ., 3.Kyoto Inst. of Tech.)

Oral presentation

[12a-N307-1~11] 17.3 Layered materials

Sun. Sep 12, 2021 9:00 AM - 12:00 PM N307 (Oral)

Daisuke Kiriya(Osaka Pref. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-N307-1] [Young Scientist Presentation Award Speech] Observation of resonant tunneling effect due to subband levels in few layer WSe₂

〇Kei Takeyama¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi^3,1, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ.Tokyo, 2.MSL Tokyo Tech, 3.NIMS, 4.CREST-JST)

9:15 AM - 9:30 AM

[12a-N307-2] Resonant tunneling effect in 4 layer WSe₂/h-BN double quantum wells

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi^3,1, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.NIMS, 4.CREST-JST)

9:30 AM - 9:45 AM

▲ [12a-N307-3] Interactions between the edge states of bilayer zigzag SiC nanoribbons

〇Rongyao Sun¹, Jun Nakamura¹ (1.UEC (Tokyo))

9:45 AM - 10:00 AM

[12a-N307-4] Hole doping of WSe₂ by Ag-TFSI treatment

〇(M2)Shunta Suzuki¹, Hiroto Ogura¹, Yusuke Nakanishi¹, Hong En Lim¹, Takahiko Endo¹, Keiji Ueno², Yoshiyuki Nonoguchi³, Yasumitsu Miyata¹ (1.Tokyo Metro. Univ., 2.Saitama Univ., 3.Kyoto Inst. of Tech.)

10:00 AM - 10:15 AM

[12a-N307-5] Transport properties of Nickel Ditelluride epitaxial thin films

〇Kyoka Hamamoto¹, Yumiko Katayama¹, Kazunori Ueno¹ (1.Tokyo Univ.)

10:15 AM - 10:30 AM

▼ [12a-N307-6] Current injection into single-crystalline carbon-doped h-BN

〇Supawan Ngamprapawat¹, Takashi Taniguchi², Kenji Watanabe², Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. Tokyo, 2.NIMS)

10:45 AM - 11:00 AM

[12a-N307-7] Determination of atomic orbital in the valence band of SnS by ARPES measurement

〇ISSEI SUZUKI¹, Sakiko Kawanishi¹, Takahisa Omata¹, Shin-ichiro Tanaka² (1.Tohoku Univ., 2.Osaka Univ.)

11:00 AM - 11:15 AM

△ [12a-N307-8] Anomalous Photovoltaic Effect in Monolayer WS₂

〇Togo Takahashi¹, Jiang Pu¹, Takahiko Endo², Yasumitsu Miyata², Taishi Takenobu¹ (1.Nagoya Univ., 2.Tokyo Metropolitan Univ.)

11:15 AM - 11:30 AM

△ [12a-N307-9] Valley Hall effect observed for multi-layer MoS₂

〇Mikiya Ishii¹, Kareekunnan Afsal¹, Masashi Akabori¹, Hiroshi Mizuta¹, Manoharan Muruganathan¹ (1.JAIST)

11:30 AM - 11:45 AM

▼ [12a-N307-10] Zeeman splitting in monolayer WS₂

〇(P)Ufuk Erkilic¹, Shengnan Wang¹, Makoto Kawano¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Lab.)

11:45 AM - 12:00 PM

△ [12a-N307-11] Air-stable electron doping of monolayer MoS₂ by crown-ether complexes

〇(DC)Hiroto Ogura¹, Masahiko Kaneda¹, Yusuke Nakanishi¹, Yoshiyuki Nonoguchi², Jiang Pu³, Mari Ohfuchi⁴, Toshifumi Irisawa⁵, Hong En Lim¹, Takahiko Endo¹, Kazuhiro Yanagi¹, Taishi Takenobu³, Yasumitsu Miyata¹ (1.TMU, 2.Kyoto Inst. of Tech., 3.Nagoya Univ., 4.Fujitsu Lab., 5.AIST)

Oral presentation

[13a-N307-1~11] 17.3 Layered materials

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N307 (Oral)

Toshifumi Irisawa(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

9:15 AM - 9:30 AM

[13a-N307-2] Electronic properties of niobium doped WSe₂ under an external electric field

〇(PC)Kaoru Hisama¹, Yanlin Gao¹, Mina Maruyama¹, Ryo Kitaura², Susumu Okada¹ (1.Univ. of Tsukuba, 2.Nagoya Univ.)

9:30 AM - 9:45 AM

△ [13a-N307-3] Mobility Modulation in 2D Material Field-Effect Transistors by Giant Stark Effect

〇Haruki Uchiyama¹, Mina Maruyama², Susumu Okada², Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[13a-N307-4] Photo-response of MoS₂-FET with CuPc, CoPc, and H₂Pc molecules

〇Tsuyoshi Takaoka¹, Md Iftekharul Alam², Hiroki Waizumi², Kosei Takahashi², Muhammad Shamim Al Mamun², Nasir Uddin², Yasuyuki Sainoo¹, Tadahiro Komeda¹ (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ.)

10:00 AM - 10:15 AM

[13a-N307-5] Fabrication of FETs with Gate Dielectric by Oxidized Tantalum Disulfide

〇Hayate Takeuchi¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

10:15 AM - 10:30 AM

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

〇(D)YihRen Chang¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.UTokyo)

10:45 AM - 11:00 AM

[13a-N307-7] Development of anti-ambipolar transistors using two dimensional thin films

〇Yoshitaka Shingaya¹, Takuya Iwasaki¹, Ryoma Hayakawa¹, Shu Nakaharai¹, Yutaka Wakayama¹ (1.NIMS)

11:00 AM - 11:15 AM

[13a-N307-8] Light emitting diode of MoTe₂ lateral PN junction formed by dual back gate voltage modulation

〇Kairi Yamase¹, Shunya Hayashida¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

11:15 AM - 11:30 AM

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

〇Takamasa Kawanago¹, Takahiro Matsuzaki², Ryosuke Kajikawa², Iriya Muneta², Takuya Hoshii², Kuniyuki Kakushima², Kazuo Tsutsui¹, Hitoshi Wakabayashi² (1.Tokyo Tech FIRST, 2.Tokyo Tech)

11:30 AM - 11:45 AM

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

〇Yudai Suzuki¹, Naoki Matsuura¹, Yuya Furusawa¹, Osamu Kubo¹, Hiroshi tabata¹, Mitsuhiro Katayama¹ (1.Grad Sch Eng,Osaka Univ.)

11:45 AM - 12:00 PM

△ [13a-N307-11] Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction

〇Tomohiro Fukui¹, Takashi Taniguchi², Kenji Watanabe², Tomonori Nishimura¹, Kousuke Nagashio¹ (1.Univ. of Tokyo, 2.NIMS)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[11a-N302-1~11] 17.3 Layered materials

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS2 atomic layers

▼ [11a-N302-4] Synthesis of 2D MoS2 and WS1-xSex thin films by Mist-CVD

△ [11a-N302-5] Fabrication of MoS2 Films by Reactive Sputtering Method

△ [11a-N302-6] Deposition of n-SnSe thin films doped with Bi

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS2

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS2 nanosheet

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sizedGraphite-FeCl3 intercalation compound

[11p-N302-1~13] 17.3 Layered materials

▲ [11p-N302-7] Anomalous hysteresis in dual-gate h-BN/WTe2/h-BN van der Waals junction devices

▲ [11p-N302-9] UV/Thermally Induced Isomerization of Spiropyran on MoS2 Lattice

[12a-N307-1~11] 17.3 Layered materials

▲ [12a-N307-3] Interactions between the edge states of bilayer zigzag SiC nanoribbons

▼ [12a-N307-6] Current injection into single-crystalline carbon-doped h-BN

△ [12a-N307-8] Anomalous Photovoltaic Effect in Monolayer WS2

△ [12a-N307-9] Valley Hall effect observed for multi-layer MoS2

▼ [12a-N307-10] Zeeman splitting in monolayer WS2

△ [12a-N307-11] Air-stable electron doping of monolayer MoS2 by crown-ether complexes

[13a-N307-1~11] 17.3 Layered materials

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

△ [13a-N307-3] Mobility Modulation in 2D Material Field-Effect Transistors by Giant Stark Effect

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

△ [13a-N307-11] Demonstration of single-gate MoS2 TFET with natural in-plane heterojunction

Authenticate

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

▼ [11a-N302-4] Synthesis of 2D MoS₂ and WS_1-xSe_x thin films by Mist-CVD

△ [11a-N302-5] Fabrication of MoS₂ Films by Reactive Sputtering Method

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS₂

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS₂ nanosheet

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sized
Graphite-FeCl₃ intercalation compound

▲ [11p-N302-7] Anomalous hysteresis in dual-gate h-BN/WTe₂/h-BN van der Waals junction devices

▲ [11p-N302-9] UV/Thermally Induced Isomerization of Spiropyran on MoS₂ Lattice

△ [12a-N307-8] Anomalous Photovoltaic Effect in Monolayer WS₂

△ [12a-N307-9] Valley Hall effect observed for multi-layer MoS₂

▼ [12a-N307-10] Zeeman splitting in monolayer WS₂

△ [12a-N307-11] Air-stable electron doping of monolayer MoS₂ by crown-ether complexes

△ [13a-N307-11] Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction