Taro Sasaki

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N307 (Oral)

Oral presentation
| 17 Nanocarbon Technology
| 17.3 Layered materials

[13a-N307-1~11] 17.3 Layered materials

9:00 AM - 9:15 AM

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)