Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[13a-N307-1~11] 17.3 Layered materials

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N307 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

9:15 AM - 9:30 AM

[13a-N307-2] Electronic properties of niobium doped WSe₂ under an external electric field

〇(PC)Kaoru Hisama¹, Yanlin Gao¹, Mina Maruyama¹, Ryo Kitaura², Susumu Okada¹ (1.Univ. of Tsukuba, 2.Nagoya Univ.)

9:30 AM - 9:45 AM

△ [13a-N307-3] Mobility Modulation in 2D Material Field-Effect Transistors by Giant Stark Effect

〇Haruki Uchiyama¹, Mina Maruyama², Susumu Okada², Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[13a-N307-4] Photo-response of MoS₂-FET with CuPc, CoPc, and H₂Pc molecules

〇Tsuyoshi Takaoka¹, Md Iftekharul Alam², Hiroki Waizumi², Kosei Takahashi², Muhammad Shamim Al Mamun², Nasir Uddin², Yasuyuki Sainoo¹, Tadahiro Komeda¹ (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ.)

10:00 AM - 10:15 AM

[13a-N307-5] Fabrication of FETs with Gate Dielectric by Oxidized Tantalum Disulfide

〇Hayate Takeuchi¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

10:15 AM - 10:30 AM

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

〇(D)YihRen Chang¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.UTokyo)

10:45 AM - 11:00 AM

[13a-N307-7] Development of anti-ambipolar transistors using two dimensional thin films

〇Yoshitaka Shingaya¹, Takuya Iwasaki¹, Ryoma Hayakawa¹, Shu Nakaharai¹, Yutaka Wakayama¹ (1.NIMS)

11:00 AM - 11:15 AM

[13a-N307-8] Light emitting diode of MoTe₂ lateral PN junction formed by dual back gate voltage modulation

〇Kairi Yamase¹, Shunya Hayashida¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

11:15 AM - 11:30 AM

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

〇Takamasa Kawanago¹, Takahiro Matsuzaki², Ryosuke Kajikawa², Iriya Muneta², Takuya Hoshii², Kuniyuki Kakushima², Kazuo Tsutsui¹, Hitoshi Wakabayashi² (1.Tokyo Tech FIRST, 2.Tokyo Tech)

11:30 AM - 11:45 AM

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

〇Yudai Suzuki¹, Naoki Matsuura¹, Yuya Furusawa¹, Osamu Kubo¹, Hiroshi tabata¹, Mitsuhiro Katayama¹ (1.Grad Sch Eng,Osaka Univ.)

11:45 AM - 12:00 PM

△ [13a-N307-11] Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction

〇Tomohiro Fukui¹, Takashi Taniguchi², Kenji Watanabe², Tomonori Nishimura¹, Kousuke Nagashio¹ (1.Univ. of Tokyo, 2.NIMS)

Session information

[13a-N307-1~11] 17.3 Layered materials

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

[13a-N307-2] Electronic properties of niobium doped WSe₂ under an external electric field

△ [13a-N307-3] Mobility Modulation in 2D Material Field-Effect Transistors by Giant Stark Effect

[13a-N307-4] Photo-response of MoS₂-FET with CuPc, CoPc, and H₂Pc molecules

[13a-N307-5] Fabrication of FETs with Gate Dielectric by Oxidized Tantalum Disulfide

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

[13a-N307-7] Development of anti-ambipolar transistors using two dimensional thin films

[13a-N307-8] Light emitting diode of MoTe₂ lateral PN junction formed by dual back gate voltage modulation

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

△ [13a-N307-11] Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction

Authenticate

Session information

[13a-N307-1~11] 17.3 Layered materials

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

[13a-N307-2] Electronic properties of niobium doped WSe2 under an external electric field

△ [13a-N307-3] Mobility Modulation in 2D Material Field-Effect Transistors by Giant Stark Effect

[13a-N307-4] Photo-response of MoS2-FET with CuPc, CoPc, and H2Pc molecules

[13a-N307-5] Fabrication of FETs with Gate Dielectric by Oxidized Tantalum Disulfide

▼ [13a-N307-6] Thermodynamics perspective to surface oxide amelioration in 2D devices

[13a-N307-7] Development of anti-ambipolar transistors using two dimensional thin films

[13a-N307-8] Light emitting diode of MoTe2 lateral PN junction formed by dual back gate voltage modulation

[13a-N307-9] Demonstration of High Gain WSe2 CMOS Inverter operating at Vdd of 0.5 V

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

△ [13a-N307-11] Demonstration of single-gate MoS2 TFET with natural in-plane heterojunction

Authenticate

[13a-N307-2] Electronic properties of niobium doped WSe₂ under an external electric field

[13a-N307-4] Photo-response of MoS₂-FET with CuPc, CoPc, and H₂Pc molecules

[13a-N307-8] Light emitting diode of MoTe₂ lateral PN junction formed by dual back gate voltage modulation

[13a-N307-9] Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

△ [13a-N307-11] Demonstration of single-gate MoS₂ TFET with natural in-plane heterojunction