[13a-N307-1~11] 17.3 Layered materials

△ [13a-N307-10] Conduction mechanism at the electrode interface of germanane thin film transistor

〇Yudai Suzuki¹, Naoki Matsuura¹, Yuya Furusawa¹, Osamu Kubo¹, Hiroshi tabata¹, Mitsuhiro Katayama¹ (1.Grad Sch Eng,Osaka Univ.)

Keywords:semiconductor, layered material