[13a-N307-1~11] 17.3 Layered materials

[13a-N307-7] Development of anti-ambipolar transistors using two dimensional thin films

〇Yoshitaka Shingaya¹, Takuya Iwasaki¹, Ryoma Hayakawa¹, Shu Nakaharai¹, Yutaka Wakayama¹ (1.NIMS)

Keywords:anti-ambipolar transistor, Transition metal dichalcogenides

We report on the results of fabricating antiambipolar transistors with negative resistance at room temperature by combining two-dimensional thin films. We have proposed a organic transistor in which P-type semiconductor and N-type semiconductor have a PN junction in the center of the channel, and succeeded in increasing or decreasing the drain current up to four orders of magnitude at room temperature. Using the previous knowledge obtained with organic semiconductors, we have developed an antiambipolar transistor device using transition metal dichalcogenides.