The 82nd JSAP Autumn Meeting 2021

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-N304-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N304 (Oral)

Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

10:45 AM - 11:00 AM

△ [11a-N304-7] Impact of Ba/Si deposition rate ratios during RF sputtering on the characteristics of BaSi2 films on glass substrates

〇Ryota Koitabashi1, Hayato Hasebe1, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corporation)

Keywords:BaSi2, sputtering, silicide semiconductor