[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

[11a-N305-3] Study of Mg activation process in Mg-implanted GaN by means of positron annihilation

〇Akira Uedono¹, R. Tanaka², S. Takashima², K. Ueno², M. Edo², K. Shima³, K. Kojima³, S.F. Chichibu³, S. Ishibashi⁴ (1.Univ. of Tsukuba, 2.Fuji Electric, 3.IMRAM-Tohoku Univ., 4.AIST)

Keywords:GaN, ion implantation, defect

Positron annihilation is a high-sensitivity and non-destructive detection tool for vacancy-type defects in solids. In the present experiment, we used positron annihilation to study the relationship between vacancies and Mg activation in Mg-implanted GaN. Mg and N ions were implanted into MOVPE-GaN films grown on GaN substrates. The p-type CV response for Mg implanted GaN with N implantation was observed. We will report the change in the depth profile of Mg, its activation process, and relationship with vacancies.