[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

△ [11a-N305-4] Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion

〇Kohei Shima¹, Ryo Tanaka², Shinya Takashima², Katsunori Ueno², Masaharu Edo², Kazunobu Kojima¹, Akira Uedono³, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Univ. of Tsukuba)

Keywords:GaN, Ion implantation, Cathodoluminescence

Recently, p-type I/I-GaN:Mg has been realized by vacancy-guided Mg diffusion method using Mg,N sequential ion implantation (I/I) followed by atmospheric pressure annealing. In the previous talk, we reported the photoluminescence (PL) and time-resolved PL of the sample in the region from the surface to about 80 nm depth. On another hand, Mg diffused down to 220 nm depth guided by N-I/I-induced vacancy defects, thus it is necessary to investigate the depth dependence of the luminescent properties. In this study, we report the results of spatially resolved cathodoluminescence measurements on the cleaved section of a vacancy-guided Mg diffusion sample.