[11a-S301-1~7] Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

[11a-S301-2] Control and application of ALD/ALE process selectivity

〇Yukihiro Shimogaki¹ (1.The Univ. of Tokyo)

Keywords:Atomic Layer Deposition process, Atomic Layer Etching process, Surface reaction mechanism

In ALD (Atomic Layer Deposition) and ALE (Atomic Layer Etching), selective film formation and etching may be possible in some cases, where the film formation and etching may progress or not depending on the underlying material. In this talk, I would like to discuss the basic mechanism of such selectivity and its control method mainly from the standpoint of thin film deposition, and discuss the application of these selective methods.