Steady progress on GaN power transistors

Tamotsu Hashizume

Presentation information

Symposium (Oral)

Symposium » (Open Symposium) Symposium in memory of Dr. Isamu Akasaki

[11p-N101-1~12] (Open Symposium) Symposium in memory of Dr. Isamu Akasaki

Sat. Sep 11, 2021 1:30 PM - 5:55 PM N101 (Oral)

Motoaki Iwaya(Meijo Univ.), Tetsuya Takeuchi(Meijo Univ.), Yoshio Honda(Nagoya Univ.)

4:00 PM - 4:30 PM

[11p-N101-9] Steady progress on GaN power transistors

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

Keywords:GaN, transistor

GaN-based power transistors such as a high-electron mobility transistor (HEMT) and a power switching transistor are considered to be the emerging front-runners to meet the ever growing demand for improved performance in terms of power, operation speed, and efficiency. This paper presents steady progress on GaN power transistors.