[11p-N302-1~13] 17.3 Layered materials

▲ [11p-N302-7] Anomalous hysteresis in dual-gate h-BN/WTe₂/h-BN van der Waals junction devices

〇Xiaohan Yang¹, Yijin Zhang¹, Eisuke Watanabe¹, Satoru Masubuchi¹, Rai Moriya¹, Shota Okazaki², Takao Sasagawa², Mina Maruyama³, Susumu Okada³, Kenji Watanabe⁴, Takashi Taniguchi^1,4, Tomoki Machida^1,5 (1.IIS Univ. Tokyo, 2.MSL-Tokyo Tech., 3.Tsukuba Univ., 4.NIMS, 5.CREST-JST)

Keywords:Tungsten ditelluride, Van der Waals hetero junction, Hysteresis