[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-10] Fabrication of β-FeSi₂/Si modulation-doped heterostructures and their electrical properties

〇Kazuki Yamato¹, Hidekazu Kanda¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:beta-FeSi2, silicide

At the Si/β-FeSi2 hetero-interface, there is a band discontinuity in the conduction band due to the difference in electron affinity (0.32 eV), and the formation of two-dimensional electron gas (2DEG) at the Si/β-FeSi2 hetero-interface is expected. We aim at the formation of 2DEGs in the Si/β-FeSi2 modulated doping structure, where the Sb modulated doped Si layer is used as the electron supply layer, but the Sb in Si has been reported to segregate to the growth surface. In this study, we fabricated two kinds of β-FeSi2/Si modulated doping structures by changing the stacking order of β-FeSi2 and Si, and verified the effect of Sb segregation on 2DEG formation from the electrical characteristics.