[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-9] Evaluation of PL lifetimes in Si/β-(Fe_1-xRu_x)Si₂/Si polycrystalline stacked structures

〇Ren Yoshihara¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:beta-FeSi2, mixed semiconductor, silicide semiconductor

The luminescence (PL) intensity of β-FeSi2 has not been obtained at room temperature. One of the reasons for this is that the interband transition probability is small due to the dominance of the 3d orbital of Fe. We aim to increase the interband transition probability by replacing part of Fe with Ru and increasing the contribution of Si-p orbitals in the valence band. We have observed an increase in the luminescence intensity by Ru addition. In order to verify the mechanism of this increase in luminescence intensity, we have evaluated the luminescence lifetime.