[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-4] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement

〇Tsubasa Umehara¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:semiconductor, Mg2Si, X-ray

Mg₂Si, which has a energy band width of about 0.6 eV at room temperature, is expected to be a low-cost material for photodetectors in the short-wavelength infrared region suitable for mass production. At present, the surface processing conditions and crystallinity of Mg₂Si wafers have not been studied, and it is necessary to establish a wafer processing technology suitable for the fabrication of photodetectors. In this study, we polish Mg₂Si and report on the evaluation of the crystallinity of the polished surface using the peak tail of the XRC measurement.