[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-3] Reactive Ion Etching Property of Mg₂Si Substrate Using CF₄

〇Rikuto Nakamura¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Keywords:Magnesium silicide, Photodiode, Reactive Ion Etching

We have been developing Mg2Si-pn junction photodiodes (PDs) that can be mass-produced at low cost. In order to fabricate PDs with two-dimensional array structures, microfabrication using reactive ion etching (RIE) is indispensable. We have previously reported that RIE with SF6 and CF4, which are highly compatible with the silicon process, can be used for etching, and that the etching rate of CF4 is 20% faster than that of SF6. In this study, we report on the RF power dependence of the etching rate and the surface condition after etching in RIE with CF4.