[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[11p-N305-5] First-principles study on electronic structure of SiC/SiO₂ step interface

〇(M1)Kazuma Yokota¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ)

Keywords:First-principles study, SiC, step interface

The electron mobility of SiC/SiO₂ interface is much lower than that in bulk because of the existence of interface defects. Since the 4H-SiC(0001)/SiO₂ interface is not atomically flat, the step edges may degrade carrier mobility. 4H-SiC(0001) face is formed by the stacking of h and k sites. The first principles calculation for the stepped SiC/SiO₂ interface declared that the difference in the formation energy between the interfaces in which the h and k sites are the upper layer of the step is small. However, the electronic structure of the interface is significantly affected by the stacking sequence.