Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Sat. Sep 11, 2021 1:30 PM - 4:15 PM N305 (Oral)

Hiroshi Yano(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[11p-N305-1] Investigation of leakage current and threshold voltage instability in NO nitrided 4H-SiC(11-20) MOS devices

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

1:45 PM - 2:00 PM

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka univ., 2.AIST)

2:00 PM - 2:15 PM

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂interface

〇Toru Akiyama¹, Tsunashi Shimizu¹, Tomonori Ito¹, Hiroyuki Kageshima², Kenji Shiraishi³ (1.MIe Univ., 2.Shimane Univ., 3.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method

〇Sachika Nagamizo¹, Tanaka Hajime¹, Mori Nobuya¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[11p-N305-5] First-principles study on electronic structure of SiC/SiO₂ step interface

〇(M1)Kazuma Yokota¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ)

3:00 PM - 3:15 PM

▲ [11p-N305-6] Evaluation of long-term reliability of 4H-SiC(0001) CMOS ring oscillators at high temperature

〇(PC)Kidist Moges Ayele¹, Takuma Kobayashi¹, Takuji Hosoi¹, Takayoshi Shimura¹, Keita Tachiki², Tsunenobu Kimoto², Heiji Watanabe¹ (1.Graduate School of Eng., Osaka Univ., 2.Graduate School of Eng., Kyoto Univ.)

3:15 PM - 3:30 PM

[11p-N305-7] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation

〇Shin-Ichiro Kuroki¹, Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

3:30 PM - 3:45 PM

[11p-N305-8] Output characteristics of SOI-Si/4H-SiC hybrid pixel devices for radiation hardened CMOS image sensors

〇Tatsuya Meguro¹, Masayuki Tsutsumi¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

3:45 PM - 4:00 PM

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

〇Cuong Van Vuong¹, Tetsuya Meguro¹, Tadashi Sato¹, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Uni.)

4:00 PM - 4:15 PM

△ [11p-N305-10] Modeling of SiC JFET for High Temperature IC Design by Complementary JFETs

〇Noriyuki Maeda¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Session information

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[11p-N305-1] Investigation of leakage current and threshold voltage instability in NO nitrided 4H-SiC(11-20) MOS devices

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂interface

△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method

[11p-N305-5] First-principles study on electronic structure of SiC/SiO₂ step interface

▲ [11p-N305-6] Evaluation of long-term reliability of 4H-SiC(0001) CMOS ring oscillators at high temperature

[11p-N305-7] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation

[11p-N305-8] Output characteristics of SOI-Si/4H-SiC hybrid pixel devices for radiation hardened CMOS image sensors

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

△ [11p-N305-10] Modeling of SiC JFET for High Temperature IC Design by Complementary JFETs

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Session information

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[11p-N305-1] Investigation of leakage current and threshold voltage instability in NO nitrided 4H-SiC(11-20) MOS devices

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO2/non-basal-plane 4H-SiC interfaces annealed in NO

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interface

△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method

[11p-N305-5] First-principles study on electronic structure of SiC/SiO2 step interface

▲ [11p-N305-6] Evaluation of long-term reliability of 4H-SiC(0001) CMOS ring oscillators at high temperature

[11p-N305-7] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation

[11p-N305-8] Output characteristics of SOI-Si/4H-SiC hybrid pixel devices for radiation hardened CMOS image sensors

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

△ [11p-N305-10] Modeling of SiC JFET for High Temperature IC Design by Complementary JFETs

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△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂interface

[11p-N305-5] First-principles study on electronic structure of SiC/SiO₂ step interface