Takato Nakanuma

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Speaker, Author, Co-Author

Sat. Sep 11, 2021 1:30 PM - 4:15 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM

[11p-N305-1] Investigation of leakage current and threshold voltage instability in NO nitrided 4H-SiC(11-20) MOS devices

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

1:45 PM - 2:00 PM

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka univ., 2.AIST)

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