[11p-N305-1~10] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

〇Cuong Van Vuong¹、Tetsuya Meguro¹、Tadashi Sato¹、Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Uni.)

キーワード：4H-SiC MOSFET, Differential Amplifier, High temperature

In this research, the operation of differential amplifier based on 4H-SiC MOSFETs at temperature up to 500℃ was investigated. Based on the I_D-V_G, and I_D-V_DS characteristics measured at 500℃ indicated that, with our fabrication process, the 4H-SiC MOSFETs had ability to operate in high temperature ambient. Whereas, the stability of the output signal of the amplifier conducted at 500℃ showed that the integrated circuit based on 4H-SiC MOSFETs could operate well at 500℃. This research demonstrated that the integrated electronic circuit based on 4H-SiC MOSFET technology is promising for high-temperature applications.