The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[12a-N104-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Sep 12, 2021 9:00 AM - 11:45 AM N104 (Oral)

Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

11:15 AM - 11:30 AM

[12a-N104-9] Evaluation of heat-treated selenium films by photothermal deflection spectroscopy

Tamihiro Gotoh1 (1.Gunma Univ.)

Keywords:Chalcogenide semiconductor, Photothermal deflection spectroscopy, Defect states

Amorphous selenium (Se), which has excellent photoelectric properties, is used in high-sensitivity video camera tubes and X-ray image sensors. Both utilize the high electric field phenomenon, and the defect states in the bandgap play an important role. Although the details of defect states are becoming clear from the experiments and theoretical considerations conducted so far, there is a need for a method that makes it easier to obtain defect states information. Sensitive photothermal deflection spectroscopy (PDS) is suitable for evaluating defect states in Se films. In this study, we investigate the effect of heat treatment at crystallization temperature on subgap absorption and discuss the defect states of Se thin films.