[12a-N203-1~10] 6.4 Thin films and New materials

[12a-N203-4] Metal–Organic Molecular Beam Epitaxy of Titanium Nitride

〇Isao Ohkubo¹, Takashi Aizawa¹, Mikk Lippmaa², Takao Mori¹ (1.NIMS, 2.ISSP, U. of Tokyo)

Keywords:molecular beam epitaxy, transition-metal nitrides

Metal–organic molecular beam epitaxy (MO-MBE) of titanium nitride (TiN) is successfully demonstrated using tetrakis(dimethylamido)titanium (TDMAT) as the titanium (Ti) source. Epitaxial TiN thin films with high crystalline quality were successfully grown using the TDMAT precursor and nitrogen plasma. The presence of nitrogen plasma was crucial for obtaining epitaxial TiN thin films with high crystalline quality via MO-MBE, and the supply of nitrogen from the TDAMT molecules alone was insufficient for forming the crystalline phase of TiN. Analysis of the growth kinetics reveals the occurrence of three distinct growth regimes, including reaction-, flux-, and desorption-limited growth modes, depending on the growth temperature.