[12a-N203-1~10] 6.4 Thin films and New materials

[12a-N203-7] Growth and electronic properties of ultrathin Bi₂Te₃ films on CaF₂

〇Shinichiro Hatta¹, Shinpei Higaki¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1.Kyoto Univ.)

Keywords:ultrathin film, layered material, epitaxial growth

We grew ultrathin films of Bi₂Te₃, a layered material, by molecular beam epitaxy on CaF₂(111)/Si(111). Low-energy electron diffraction showed the epitaxial growth of single-domain Bi₂Te₃ films. We measured the electronic band structure and electrical conductivity of the films with thickness below 5 QL (~5 nm) by angle-resolved photoelectron spectroscopy and four-point probe (4PP). We report the thickness dependence of electronic properties of the ultrathin Bi₂Te₃ films.